MRF16006 Datasheet, PDF (3/5 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

L3
B1
28 Vdc
R1
L2
C1
C2
C3 C4
L1
C5
Board Material – Teflon^® Glass Laminate Dielectric
Thickness – 0.30″, ε_r = 2.55″, 2.0 oz. Copper
B1
C1, C5
C2
C3
Fair Rite Bead on #24 Wire
100 pF, B Case, ATC Chip Cap
0.1 µF, Dipped Mica Cap
0.1 µF, Chip Cap
C4
L1, L2
L3
R1
47 µF, 50 V, Electrolytic Cap
3 Turns, #18, 0.133″ ID, 0.15″ Long
9 Turns, #24 Enamel
82 Ω, 1.0 W, Carbon Resistor
Figure 1. MRF16006 Test Fixture Schematic
f
MHz
1500
1600
1700
REV 2
3
f = 1.5 GHz ^Zin
1.6 GHz
1.7 GHz
1.7 GHz
Z_o = 10 Ω
1.6 GHz _ZOL*
f = 1.5 GHz
V_CC = 28 Vdc, P_out = 6 W
Z_in
Ohms
6.28 + j 8.53
7.04 + j 9.00
9.55 + j 12.86
Z_OL*
Ohms
1.22 – j 1.37
1.58 – j 0.53
1.71 + j 0.39
Z_OL* = Conjugate of the optimum load impedance into which the device
output operates at a given output power, voltage and frequency.
Figure 2. Series Equivalent Input/Output Impedance