MRF16006 Datasheet, PDF (2/5 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = 40 mAdc, V_BE = 0)
V_(BR)CES
Collector–Base Breakdown Voltage
(I_C = 40 mAdc, I_E = 0)
V_(BR)CBO
Emitter–Base Breakdown Voltage
(I_E = 2.5 mAdc, I_C = 0)
V_(BR)EBO
Collector Cutoff Current
(VCE = 28 Vdc, V_BE = 0)
I_CES
ON CHARACTERISTICS
DC Current Gain
h_FE
(I_CE = 0.2 Adc, V_CE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
C_ob
(V_CB= 28 Vdc, f = 1.0 MHz)
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
G_pe
(V_CC = 28 Vdc, P_out = 6 Watts, f = 1600/1640 MHz)
Collector Efficiency
η
(V_CC = 28 Vdc, P_out = 6 Watts, f = 1600/1640 MHz)
Return Loss
I_RL
(V_CC = 28 Vdc, P_out = 6 Watts, f = 1600/1640 MHz)
Output Mismatch Stress
ψ
(V_CC = 28 Vdc, P_out = 6 Watts, f = 1600 MHz, Load
VSWR = 3:1 all phase angles at frequency of test)
Min
Typ
Max
Unit
Vdc
55
—
—
Vdc
55
—
—
Vdc
4.0
—
—
mAdc
—
—
2.5
—
20
—
80
pf
11
—
—
dB
7.4
—
—
%
40
45
—
dB
—
8.0
—
No Degradation in Output Power
REV 2
2