MRF16006 Datasheet, PDF (1/5 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed for 28 Volt microwave large–signal, common base, Class–C CW
amplifier applications in the range 1600 – 1640 MHz.
• Specified 28 Volt, 1.6 GHz Class–C Characteristics
Output Power = 6 Watts
Minimum Gain = 7.4 dB, @ 6 Watts
Minimum Efficiency = 40% @ 6 Watts
• Characterized with Series Equivalent Large–Signal Parameters from
1500 MHz to 1700 MHz
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to
Metal Migration
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by MRF16006/D
MRF16006
6.0 WATTS, 1.6 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 395C–01, STYLE 2
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector–Emitter Voltage
Emitter–Base Voltage
Collector–Current
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
V_CES
V_EBO
I_C
P_D
60
4.0
1.0
26
0.15
Storage Temperature Range
THERMAL CHARACTERISTICS
T_stg
–65 to +150
Thermal Resistance — Junction to Case (1) (2)
R_θJC
6.8
(1) Thermal measurement performed using CW RF operating condition.
(2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques.
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
REV 2
1
MRF16006