MRF1150MB Datasheet, PDF (3/4 Pages) Tyco Electronics – MICROWAVE POWER TRANSISTOR NPN SILICON

200
f = 1090 MHz
t_p = 10 µs
150
D = 1%
P_in = 20 W pk
17.5 W pk
15 W pk
100
12.5 W pk
50
10 W pk
20 _{0 5 10 15 20 25 30 35 40 45 50}
V_CC, SUPPLY VOLTAGE (VOLTS)
Figure 4. Output Power versus Supply Voltage
14
P_o = 150 W pk
12
V_CC = 50 V
t_p = 10 µs
D = 1%
10
8
6
4
960
1090
1215
f, FREQUENCY (MHz)
Figure 5. Power Gain versus Frequency
0
5.0
f = 960 MHz
Z_OL*
1215
5.0 ₁₀₉₀
Z_in
1215
1090
10
10
f = 960 MHz
15
P_out = 150 W pk V_CC = 50 V
t_p = 10 µs D = 1%
f
MHz
Z_in
Ohms
Z_OL*
Ohms
960
1090
1215
1.5 + j9.6
5.0 + j7.5
2.4 + j5.6
2.6 + j4.1
2.7 + j4.6
2.8 + j5.3
Z_OL* = Conjugate of the optimum load
Z_OL* = impedance into which the device
Z_OL* = output operates at a given output
Z_OL* = power, voltage, and frequency.
15
Figure 6. Series Equivalent Input/Output Impedance
REV 0
3
P_out = 150 W pk
V_CC = 50 V
t_p = 10 µs
D = 1%
SCALE  2 µs/DIV
Figure 7. Typical Pulse Performance