MRF1150MB Datasheet, PDF (1/4 Pages) Tyco Electronics – MICROWAVE POWER TRANSISTOR NPN SILICON

SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Pulse
Power Transistor
Designed for Class B and C common base amplifier applications in short
pulse TACAN, IFF, and DME transmitters.
• Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 150 Watts Peak
Minimum Gain = 7.8 dB
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Industry Standard Package
• Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input Matching for Broadband Operation
Order this document
by MRF1150MB/D
MRF1150MB
150 W PEAK, 960–1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Peak (1)
Total Device Dissipation @ T_C = 25°C (1) (2)
Derate above 25°C
Storage Temperature Range
Symbol
V_CBO
V_EBO
I_C
P_D
T_stg
Value
70
4.0
12
583
3.33
–65 to +150
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
CASE 332A–03, STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (3)
Symbol
R_θJC
Max
0.3
Unit
°C/W
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = 50 mAdc, V_BE = 0)
V_(BR)CES
70
—
—
Vdc
Collector–Base Breakdown Voltage
(I_C = 50 mAdc, I_E = 0)
V_(BR)CBO
70
—
—
Vdc
Emitter–Base Breakdown Voltage
(I_E = 5.0 mAdc, I_C = 0)
V_(BR)EBO
4.0
—
—
Vdc
Collector Cutoff Current
(V_CB = 50 Vdc, I_E = 0)
I_CBO
—
—
10
mAdc
ON CHARACTERISTICS
DC Current Gain (4)
(I_C = 5.0 Adc, V_CE = 5.0 Vdc)
h_FE
10
30
—
—
NOTES:
(continued)
1. Pulse Width = 10 µs, Duty Cycle = 1%.
2. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
4. 80 µs Pulse on Tektronix 576 or equivalent.
REV 0
1