MRF1150MB Datasheet, PDF (2/4 Pages) Tyco Electronics – MICROWAVE POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
C_ob
(V_CB = 50 Vdc, I_E = 0, f = 1.0 MHz)
FUNCTIONAL TESTS (Pulse Width = 10 µs, Duty Cycle = 1.0%)
Common–Base Amplifier Power Gain
G_PB
(V_CC = 50 Vdc, P_out = 150 W pk, f = 1090 MHz)
Collector Efficiency
η
(V_CC = 50 Vdc, P_out = 150 W pk, f = 1090 MHz)
Load Mismatch
ψ
(V_CC = 50 Vdc, P_out = 150 W pk, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
—
25
32
pF
7.8
9.8
—
dB
35
40
—
%
No Degradation in Power Output
+
C2
C3
C4
+
- ^{VCC = 50 Vdc}
L1
L2
RF
INPUT
DUT
RF
C2
OUTPUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
C1, C2 — 220 pF Chip Capacitor, 100–mil ATC
C3 — 0.1 µF/100 V
C4 — 47 µF/75 V Electrolytic
L1, L2 — 3 Turns #18 AWG, 1/8″ ID
Z1–Z10 — Distributed Microstrip Elements — See Photomaster
Board Material — 0.031″ Thick Teflon–Fiberglass, ε_r = 2.5
Figure 1. 1090 MHz Test Circuit
200
f = 960 MHz
150
1090 MHz
100
1215 MHz
50
V_CC = 50 V
t_p = 10 µs
D = 1%
00
5
10
15
20
25
P_in, INPUT POWER (WATTS pk)
Figure 2. Output Power versus Input Power
REV 0
2
200
P_in = 20 W pk
17.5 W pk
150
100
15 W pk
50 _{VCC = 50 V}
t_p = 10 µs
D = 1%
0
960
1090
f, FREQUENCY (MHz)
12.5 W pk
10 W pk
1215
Figure 3. Output Power versus Frequency