MRF1000MB Datasheet, PDF (3/4 Pages) Tyco Electronics – MICROWAVE POWER TRANSISTORS NPN SILICON

1
1
0.8
0.8
CLASS AB
0.6
I_CQ = 10 mA
V_CE = 18 V
0.6
CLASS A
P_in = 60 mW
0.4
CLASS A
I_C = 100 mA
0.4
I_CQ = 10 mA
V_CE = 18 V
V_CE = 18 V
CLASS A
0.2
f = 1090 MHz
0.2
P_in = 20 mW
I_C = 100 mA
0
0
V_CE = 18 V
0
20
40
60
80
100
960
1090
1215
P_in, INPUT POWER (mW)
f, FREQUENCY (MHz)
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Frequency
1
0.5
0.2
0.1
0.05
0.02
0.01
1
14
CLASS A BIAS POINT
13
CLASS A
P_out = 200 mW
I_C = 100 mA
V_CE = 18 V
12
CLASS AB
11
P_out = 500 mW
I_CQ = 10 mA
V_CE = 18 V
10
2
5
10
20
50
100
960
1090
1215
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
f, FREQUENCY (MHz)
Figure 4. DC Safe Operating Area
Figure 5. Power Gain versus Frequency
+āj50
+āj25
+āj100
Z_in
+āj10
1215
1090
960 ¹²⁵⁰
S₁₁
1100
950
0
10
25
+āj150
+āj250
+āj500
50
100 150 250 500
-āj500
-āj10
S_{22 950}
1215
Z_OL*
1090
1100
1250
960
-āj25
-āj250
-āj150
-āj100
-āj50
COORDINATES IN OHMS
SERIES EQUIVALENT IMPEDANCES
P_out = 0.5 W, V_CE = 18 Vdc,
I_CQ = 10 mAdc, Class AB
f
MHz
Z_in
Ohms
Z_OL*
Ohms
960
1090
1215
3.0 + j9.0
3.2 + j10
2.8 + j12
16 – j40
8.5 – j31
7.0 – j26
Z_OL* = Conjugate of the optimum load impedance
Z_OL* = into which the device output operates at a
Z_OL* = given output power, voltage, and frequency.
S–PARAMETERS — V_CE = 18 Vdc, I_C = 100 mAdc, Class A
f
(MHz)
950
1000
1050
1100
1150
1200
1250
S₁₁
|S₁₁| ∠ φ
0.77 166
0.78 165
0.77 163
0.77 162
0.78 161
0.78 159
0.78 158
S₂₁
|S₂₁| ∠ φ
2.42 40
2.36 38
2.31 33
2.31 28
2.20 23
2.20 19
2.12 12
S₁₂
|S₁₂| ∠ φ
0.016 42
0.016 48
0.016 46
0.016 46
0.015 46
0.016 47
0.016 42
S₂₂
|S₂₂| ∠ φ
0.48 –87
0.50 –90
0.51 –94
0.54 –97
0.57 –100
0.59 –103
0.61 –106
Figure 6. Common–Emitter S–Parameters and Series Equivalent Input/Output Impedances
Replaces MRF1000MA/D
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