MRF1000MB Datasheet, PDF (1/4 Pages) Tyco Electronics – MICROWAVE POWER TRANSISTORS NPN SILICON

SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Pulse
Power Transistors
Designed for Class A and AB common emitter amplifier applications in the
low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems.
• Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A
Output Power = 0.2 Watt
Minimum Gain = 10 dB
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Industry Standard Package
• Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input Matching for Broadband Operation
Order this document
by MRF1000MB/D
MRF1000MB
0.7 W, 960–1215 MHz
CLASS A/AB
MICROWAVE POWER
TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T_C = 25°C (1)
Derate above 25°C
Storage Temperature Range
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_D
T_stg
Value
20
50
3.5
200
7.0
40
–65 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
°C
CASE 332A–03, STYLE 2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case (2)
R_θJC
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = 5.0 mAdc, I_B = 0)
V_(BR)CEO
20
Collector–Emitter Breakdown Voltage
(I_C = 5.0 mAdc, V_BE = 0)
Collector–Base Breakdown Voltage
(I_C = 5.0 mAdc, I_E = 0)
V_(BR)CES
50
V_(BR)CBO
50
Emitter–Base Breakdown Voltage
(I_E = 1.0 mAdc, I_C = 0)
Collector Cutoff Current
(V_CB = 20 Vdc, I_E = 0)
V_(BR)EBO
3.5
I_CBO
—
ON CHARACTERISTICS
DC Current Gain
(I_C = 100 mAdc, V_CE = 5.0 Vdc)
h_FE
10
Max
Unit
25
°C/W
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
0.5
mAdc
—
100
—
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Replaces MRF1000MA/D
1