MRF1000MB Datasheet, PDF (2/4 Pages) Tyco Electronics – MICROWAVE POWER TRANSISTORS NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (T_C = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(V_CB = 28 Vdc, I_E = 0, f = 1.0 MHz)
C_ob
—
2.0
5.0
pF
FUNCTIONAL TESTS
Common–Emitter Power Gain — Class A
G_PE
10
12
—
dB
(V_CE = 18 Vdc, I_C = 100 mAdc, f = 1090 MHz, P_out = 200 mW)
Common–Emitter Power Gain — Class AB
G_PE
(V_CE = 18 Vdc, I_CQ = 10 mAdc, f = 1090 MHz, P_out = 0.7 W)
Load Mismatch — Class A
ψ
(V_CE = 18 Vdc, I_C = 100 mAdc, f = 1090 MHz, P_out = 200 mW,
VSWR = 10:1 All Phase Angles)
—
10.7
—
dB
No Degradation in Power Output
C1, C2, C3, C7, C8, C10 — 220 pF ATC 100 mil
C4, C9 — 4.7 µF 50 V Tantalum
C5, C6 — 0.8–8.0 pF Johanson #7290
Z1–Z10 — Distributed Microstrip Elements
Z1–Z10 — See Figure 8
Board Material — 0.031″ Thick Teflon–Fiberglass
Board Material — ε_r = 2.56
B
BASE BIAS INPUT
C2 C3 C4
Z2
Z3
C7 C8 C9
Z6
Z7
RF
INPUT
C1
Z1
Z4
Z5
DUT
Z8
C
COLLECTOR BIAS INPUT
Z9
C10
Z10
RF
OUTPUT
C5
C6
Class AB Bias Control Circuit
18 V Output I_CQ 10 mA Nominal
330
1/2 W
10
1/2 W
10 µF
50 V
0.1 µF
50 V
0.1 µF
50 V
+18 V INPUT
+18 V COLLECTOR BIAS
OUTPUT TO POINT C
BASE BIAS OUTPUT
TO POINT B
Class A Constant Current Bias Control Circuit
I_C = 100 mA, V_CE = 18 V
R2
11 k
1/2 W
R5
18 k
1/2 W
100
2W
R1
C1
Q1
C2
2N3906
1k
R3 _{1/2 W}
C4
0.1 µF
50 V _R4
2.2 k C3
1/2 W
10 µF
50 V
0.1 µF
50 V
+ā28 V INPUT
+18 V COLLECTOR BIAS
OUTPUT TO POINT C
BASE BIAS OUTPUT
0.1 µF ^{TO POINT B}
50 V
Figure 1. 1090 MHz Test Circuit
Replaces MRF1000MA/D
2