MA02303GJ Datasheet, PDF (3/7 Pages) Tyco Electronics – RF Power Amplifier IC for 2.4 GHz ISM

RF Power Amplifier IC for 2.4 GHz ISM
Typical Characteristics
(Measured data from process nominal devices)
Output Power, Drain Current and
Efficiency vs. Input Power
60
50
40
30
20
10
0
-10
I
DD
PAE
P
OUT
V
= 3.3 V
DD1, 2, 3
F = 2450 MHz
-5
0
P (dBm)
IN
300
250
200
150
100
50
0
5
Output Power, Drain Current and Efficiency
vs. Supply Voltage
60
50
40
30
20
10
0
1
PAE
P
OUT
P = -2 dBm
IN
F = 2450 MHz
2
P
OUT
3
4
P (dBm)
IN
I
DD
PAE
I
DD
5
0.35
0.30
0.25
0.20
0.15
0.10
0.05
Output Power, Input Return Loss and
Efficiency vs. Frequency
60
50
40
PAE
P
OUT
30
20
P = - 2 dBm
IN
IRL
10
V = 3.3 V
DD
0
2200
2300
2400
2500
FREQUENCY (MHz)
0
-5
-10
-15
-20
-25
-30
2600
MA02303GJ
Output Power, and Drain Current vs. Input
Power for Low Current “Bypass” Mode
(V_DD1,2 = 3.3 V, V_DD3 = 0.0 V)
12
300
V
= 3.3 V, V = 0.0 V
10
DD1, 2
DD3
250
F = 2450 MHz
8
PAE
6
P
OUT
200
I
DD
150
4
100
2
50
0
0
-10
-5
0
5
P (dBm)
IN
Output Power, Drain Current and Efficiency
vs. V_DD1 for Power Control
30
600
25
20
P
OUT
15
500
I
DD1
400
I
DD2
300
10
200
5
100
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V (V)
DD1
Output Power and Drain Current vs.
Temperature at V_DD = +3.0 V
35
30
25
20
15
10
5
0
-50
P = - 2 dBm
IN
V - 3.0 V
DD
F = 2450 MHz
0
50
Temperature, T (^oC)
S
350
300
250
I
200
DD
P
OUT
150
100
50
0
100
Specifications subject to change without notice.
3
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