MRF177 Datasheet, PDF (2/9 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER MOSFET

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic (1)
Symbol
Min
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 50 mA)
V(BR)DSS
65
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
—
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
—
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = 10 V, ID = 50 mA)
VGS(th)
1.0
Drain–Source On–Voltage
(VGS = 10 V, ID = 3.0 A)
VDS(on)
—
Forward Transconductance
(VDS = 10 V, ID = 2.0 A)
gfs
1.8
DYNAMIC CHARACTERISTICS (1)
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
—
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Coss
—
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Crss
—
FUNCTIONAL CHARACTERISTICS (Figure 8) (2)
Common Source Power Gain
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA)
GPS
10
Drain Efficiency
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA)
η
55
Electrical Ruggedness
ψ
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA,
Load VSWR = 30:1, All Phase Angles At Frequency of Test)
(1) Note each transistor chip measured separately
(2) Both transistor chips operating in push–pull amplifier
Typ
Max
Unit
—
—
Vdc
—
2.0
mAdc
—
1.0
µAdc
3.0
6.0
Vdc
—
1.4
Vdc
2.2
—
mhos
100
—
pF
105
—
pF
10
—
pF
12
—
dB
60
—
%
No Degradation
in Output Power
Before & After Test
REV 9
2