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MRF177 Datasheet, PDF (1/9 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER MOSFET | |||
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SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power
Field Effect Transistors
NâChannel Enhancement Mode MOSFET
Designed for broadband commercial and military applications up to 400 MHz
frequency range. Primarily used as a driver or output amplifier in pushâpull
configurations. Can be used in manual gain control, ALC and modulation
circuits.
⢠Typical Performance at 400 MHz, 28 V:
Output Power â 100 W
Gain â 12 dB
Efficiency â 60%
2
⢠Low Thermal Resistance
⢠Low Crss â 10 pF Typ @ VDS = 28 Volts
6
⢠Ruggedness Tested at Rated Output Power 5, 8
1, 4
⢠Nitride Passivated Die for Enhanced Reliability
7
⢠Excellent Thermal Stability; Suited for Class A
Operation
3
Order this document
by MRF177/D
MRF177
100 W, 28 V, 400 MHz
NâCHANNEL
BROADBAND
RF POWER MOSFET
CASE 744Aâ01, STYLE 2
MAXIMUM RATINGS
Rating
Symbol
Value
DrainâSource Voltage
DrainâGate Voltage (RGS = 1.0 Mâ¦)
GateâSource Voltage
Drain Current â Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
VDSS
65
VDGR
65
VGS
±40
ID
16
PD
270
1.54
Storage Temperature Range
Operating Temperature Range
THERMAL CHARACTERISTICS
Tstg
â 65 to +150
TJ
200
Characteristic
Symbol
Max
Thermal Resistance, JunctionâtoâCase
RθJC
0.65
(1) Total device dissipation rating applies only when the device is operated as an RF pushâpull amplifier.
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE â CAUTION â MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 9
1
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