MA4E1317 Datasheet, PDF (2/5 Pages) Tyco Electronics – GaAs Flip Chip Schottky Barrier Diodes

GaAs Flip Chip
Schottky Barrier Diodes
MA4E1317, MA4E1318,
MA4E1319-1, MA4E1319-2 V1
Electrical Specifications @ Ta = 25 °C
Parameters and Test Conditions Symbol Units
MA4E1317
Junction Capacitance at 0V at 1 Mhz
Cj
Min Typ Max
pF
.020
MA4E1318
Min
Typ
Max
.020³
MA4E1319-1 or -2
Min
Typ
Max
.020³
Total Capacitance at 0V at 1 Mhz¹
Ct
Junction Capacitance Difference
∆Cj
Series Resistance at +10mA²
Rs
Forward Voltage at +1mA
Vf1
Forward Voltage Difference at 1mA
∆Vf
Reverse Breakdown Voltage at -10uA Vbr
SSB Noise Figure
NF
pF .030
pF
Ohms
Volts .60
Volts
Volts 4.5
dB
.045
4
.70
7
6.5⁴
.060 .030³ .045³ .060³ .030³
.005 .010
7
4
7
.80
.60
.70
.80
.60
.005 .010
4.5
6.5⁴
.045³
.005
4
.70
.005
7
6.5⁴
.060³
.010
7
.80
.010
Notes:
1. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp.
2. Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 ohms.
3. Capacitance for the MA4E1318 and MA4E1319-1 or -2 is per Schottky diode.
4. Measured at an LO frequency of 9.375 Ghz, with an IF frequency of 300 Mhz. LO drive level is +6 dBM for a single Schottky junction. The
IF noise figure contribution (1.5 dB) is included.
Absolute Maximum Ratings @ 25 °C
(Unless Otherwise Noted) ¹
Parameter
Absolute Maximum
Operating Temperature
Storage Temperature
Junction Temperature
-65 °C to +125 °C
-65 °C to +150 °C
+175 °C
Incident LO Power
Incident RF Power
+ 20 dBm
+ 20 dBm
Mounting Temperature
+235 °C for 10 seconds
1. Operation of this device above any one of these parameters
may cause permanent damage.
Forward Current vs Temperature
100.00
10.00
T=125^°C
1.00
0.10
T=25^°C
0.01
T=-50^°C
0.00
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
Forward Voltage (V)
2
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