MA4E1317 Datasheet, PDF (1/5 Pages) Tyco Electronics – GaAs Flip Chip Schottky Barrier Diodes

GaAs Flip Chip
Schottky Barrier Diodes
Features
• Low Series Resistance
• Low Capacitance
• High Cutoff Frequency
• Silicon Nitride Passivation
• Polyimide Scratch Protection
• Designed for Easy Circuit Insertion
Description and Applications
M/A-COM's MA4E1317 single, MA4E1318 anti-parallel
pair, MA4E1319-1 reverse tee and MA4E1319-2
series tee are gallium arsenide flip chip Schottky
barrier diodes. These devices are fabricated on
OMCVD epitaxial wafers using a process designed
for high device uniformity and extremely low
parasitics. The diodes are fully passivated with
silicon nitride and have an additional layer of
polyimide for scratch protection. The protective
coatings prevent damage to the junction during
automated or manual handling. The flip chip
configuration is suitable for pick and place insertion.
The high cutoff frequency of these diodes allows use
through millimeter wave frequencies. Typical applications
include single and double balanced mixers in PCN
transceivers and radios, police radar detectors, and
automotive radar detectors. The devices can be
used through 80 GHz.
The MA4E1318 anti-parallel pair is designed for use
in subharmonically pumped mixers. Close matching
of the diode characteristics results in high LO
suppression at the RF input.
MA4E1317, MA4E1318,
MA4E1319-1, MA4E1319-2 V1
MA4E1317
MA4E1318
MA4E1319-1
MA4E1319-2
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: [phone] / Fax: [phone]
• Europe Tel: [phone] / Fax: [phone]
• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macom.com for additional data sheets and product information.