MA4SW110 Datasheet, PDF (1/8 Pages) Tyco Electronics – Monolithic PIN Diode Switches

Broadband Monolithic
Silicon PIN Diode Switches
Rev 5.0
Features
• Broad Bandwidth
• Specified up to 20 GHz
• Usable to 26.5 GHz
• Low Insertion Loss / High Isolation
• Rugged, Fully Monolithic, Glass Encapsulated
Construction
Description
The MA4SW110, 210 and 310 series are broad band
monolithic switches using series and shunt connected
silicon PIN diodes. They are designed for use as small
signal, high performance switches in applications up to
26.5 Ghz. They provide performance levels superior to
those realized by hybrid MIC designs incorporating
beam lead and PIN chip diodes that require chip and
wire assembly.
These switches are fabricated using M/A-COM’s
patented HMIC^TM (Heterolithic Microwave Integrated
Circuit) process, US Patent 5,268,310. This process
allows the incorporation of silicon pedestals that form
series and shunt diodes or vias by imbedding them in
low loss glass. By using small spacing between
elements, this combination of silicon and glass gives
HMIC devices low loss and high isolation performance
through low millimeter frequencies.
Large bond pads facilitate the use of low inductance
ribbon leads, while gold backside metalization allows for
manual or automatic chip bonding via 80/20 AuSn solder
or conductive epoxy
Absolute Maximum Ratings¹
Parameter
Operating Temperature
Storage Temperature
Applied Voltage (Reverse)
RF Incident Power
Bias Current
Absolute Maximum
-65 ^oC to +125^oC
-65 ^oC to +150^oC
50 volts
+30 dBm
50mA
1. Exceeding these limits may cause permanent damage.
MA4SW110
MA4SW210
MA4SW310
MA4SW110 (SPST)
MA4SW210 (SPDT)
MA4SW310 (SP3T)
Specification Subject to Change Without Notice
M/A-COM, Inc. _______________________________________________________________________________
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