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MA4PBL027 Datasheet, PDF (1/5 Pages) Tyco Electronics – HMICTM Silicon Beam-Lead PIN Diodes
MA4PBL027
HMIC Silicon Beamlead PIN Diode
V2
Features
♦ No Wirebonds Required
♦ Rugged Silicon-Glass Construction
♦ Silicon Nitride Passivation
♦ Polymer Scratch and Impact Protection
♦ Low Parasitic Capacitance and Inductance
♦ Ultra Low Capacitance < 40 fF
♦ Excellent RC Product < 0.10 pS
♦ High Switching Cutoff Frequency > 110 GHz
♦ 110 Nanosecond Minority Carrier Lifetime
♦ Driven by Standard +5V TTL PIN Diode Driver
Description
The MA4PBL027 is a silicon beamlead PIN diode
fabricated with M/A-COM Technology Solutions
HMIC™ process. It features one silicon pedestal
embedded in a low loss, low dispersion glass which
supports the beam-leads. The diode is formed on the
top of the pedestal, and airbridges connect the diode
to the beam-leads. The topside is fully encapsulated
with silicon nitride and also has an additional
polymer layer for scratch and impact protection.
These protective coatings prevent damage to the
diode junction and air-bridge during handling and
assembly. The diodes exhibit low series resistance,
low capacitance, and extremely fast switching speed.
Applications
The ultra low capacitance, low RC product and low
profile of the MA4PBL027 makes it an ideal choice
for use in microwave and millimeter wave switch
designs, where low insertion loss and high isolation
are required. The low bias levels of +10 mA in the
low loss state and 0v in the isolation state allows the
use of a simple + 5V TTL gate driver. These diodes
can be used as switching arrays on radar systems,
high speed ECM circuits, optical switching networks,
instrumentation, and other wideband multi-throw
switch assemblies.
MA4PBLP027
Topside
Bottom
Absolute Maximum Ratings @ TAMB = 25°C
(unless otherwise specified)
Parameter
Absolute Maximum
Forward Current
100 mA
Reverse Voltage
90 V
Operating Temperature
-55°C to +125°C
Storage Temperature
-55°C to +150°C
Junction Temperature
+175°C
RF C.W. Incident Power
30 dBm C.W.
RF & DC Dissipated Power
150 mW
Mounting Temperature
235°C for 10 sec.
1
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development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
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Visit www.macom.com for additional data sheets and product information.
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.