NPT2021_14 Datasheet, PDF (7/9 Pages) M/A-COM Technology Solutions, Inc. – Suitable for linear and saturated applications

NPT2021
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Typical Performance as measured in the 2.5 GHz evaluation board:
CW, V_DS = 48 V, I_DQ = 350 mA (unless noted)
Rev. V1
Gain vs. Output Power over Temperature
16
+25°C
-40°C
15
+85°C
14
Drain Efficiency vs. Output Power over Temperature
70
+25°C
60
-40°C
+85°C
50
40
13
30
20
12
10
11
25
30
35
40
45
50
Output Power (dBm)
0
25
30
35
40
45
50
Output Power (dBm)
Quiescent V_GS vs. Temperature
-1.1
175 mA
350 mA
-1.2
525 mA
-1.3
-1.4
-1.5
-1.6
-50
-25
0
25
50
Temperature (°C)
75
100
7
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