NPT2021_14 Datasheet, PDF (1/9 Pages) M/A-COM Technology Solutions, Inc. – Suitable for linear and saturated applications

NPT2021
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Features
 GaN on Si HEMT D-Mode Transistor
 Suitable for linear and saturated applications
 Tunable from DC - 2.5 GHz
 48 V Operation
 16.5 dB Gain at 2.5 GHz
 55 % Drain Efficiency at 2.5 GHz
 100 % RF Tested
 TO-272 Package
 RoHS* Compliant and 260°C reflow compatible
Description
The NPT2021 GaN HEMT is a wideband transistor
optimized for DC - 2.5 GHz operation. This device
supports CW, pulsed, and linear operation with
output power levels to 45 W in an industry standard
plastic package with bolt down flange.
The NPT2021 is ideally suited for defense
communications, land mobile radio, avionics,
wireless infrastructure, ISM applications and VHF/
UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
Functional Schematic
2
1
3
Rev. V1
Ordering Information
Part Number
NPT2021
NPT2021-SMBPPR
Package
Bulk Quantity
Sample Board
Pin Configuration
Pin No.
Pin Name
1
RF_IN / V_G
2
RF_OUT / V_D
3
Pad¹
Function
RF Input / Gate
RF Output / Drain
Ground / Source
1. The exposed pad centered on the package bottom must be
connected to RF and DC ground. This path must also
provide a low thermal resistance heat path.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support