NPT2021_14 Datasheet, PDF (4/9 Pages) M/A-COM Technology Solutions, Inc. – Suitable for linear and saturated applications

NPT2021
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Rev. V1
Load-Pull Performance: V_DS = 48 V, I_DQ = 350 mA, T_C = 25°C
Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance
Frequency
Z_S
(MHz)
()
Z_L
P_SAT
()
(W)
900
1.1 + j0.7
7.3 + j5.5
74
G_SS
(dB)
24
Drain Efficiency
@ P_SAT (%)
68
2000
1.4 - j6.1
2.9 + j2.4
65
17
68
2500
1.5 - j7.6
2.3 + j0.6
64
14
65
Impedance Reference
Z_S and Z_L vs. Frequency
Z_S
Z_L
Gain vs. Output Power
24
Drain Efficiency vs. Output Power
70
22
20
900 MHz
2000 MHz
2500 MHz
18
16
14
60
900 MHz
2000 MHz
50
2500 MHz
40
30
20
10
12
25
30
35
40
45
50
4
Output Power (dBm)
0
25
30
35
40
45
50
Output Power (dBm)
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support