XR1004-BD_15 Datasheet, PDF (6/8 Pages) M/A-COM Technology Solutions, Inc. – Receiver

XR1004-BD
Receiver
30.0-46.0 GHz
Rev. V1
App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1,
Vd2 and Vd3 with Vd(1,2,3)=4.0V, Id1=Id2=25mA and Id3=145mA. Additionally, a mixer and doubler bias are
also required with Vg4=Vg5=-0.5V. Adjusting Vg4 and Vg5 above or below this value can adversely affect con-
version gain, image rejection and intercept point performance. It is also recommended to use active biasing to
keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. De-
pending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single
transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to
sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage.
The typical gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon diodes to limit the
applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available be-
fore applying the positive drain supply.
App Note [2] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the
drain or gate pad DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance
(~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads.
For Individual Stage Bias -- Each DC pad (Vd1,2,3 and Vg1,2,3,4,5) needs to have DC bypass capacitance
(~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recom-
mended.
Typical Application
M/A-COM Tech's 30.0-46.0 GHz XR1004-BD GaAs MMIC Receiver can be used in saturated radio applications
and linear modulation schemes up to 128 QAM. The receiver can be used in upper and lower sideband applica-
tions from 30.0-46.0 GHz.
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