NPT1010_15 Datasheet, PDF (6/10 Pages) M/A-COM Technology Solutions, Inc. – 100W RF Power Transistor

NPT1010
RF Performance in 500-1000MHz Broadband Application Circuit
V_DS=28V, I_DQ=700mA, T_A=25°C unless otherwise noted
Figure 17 - Input and output return loss of
the 500-1000MHz broadband application
circuit, P_IN = -5dBm
Table 2: Power, gain, efficiency and temperature rise across frequency in the 500-1000MHz appli-
cation circiut
Frequency
(MHz)
500
550
600
650
700
750
800
850
900
950
1000
P_SAT
(dBm)
48.9
49.3
49.8
48.3
48.1
48.0
49.4
49.7
50.0
49.0
48.3
P_SAT (W)
77.8
84.9
94.8
68.2
63.8
63.1
86.9
92.5
98.9
79.4
67.1
Drain Efficiency
@ P_SAT (%)
60
65
69
63
56
55
63
66
66
69
67
G_SS (dB)
18.1
17.4
16.6
16.1
15.5
15.1
15.1
15.4
15.7
16.0
16.0
T_J,RISE (°C)¹
76
66
63
59
73
76
76
71
74
53
49
Note 1: Temperature rise is from junction to case and is calculated from the dissipated power using an R_TH
value of 1.4°C/W
NPT1010
Page 6
NDS-023 Rev. 3, April 2013