NPT1010_15 Datasheet, PDF (3/10 Pages) M/A-COM Technology Solutions, Inc. – 100W RF Power Transistor

NPT1010
Load-Pull Data, Reference Plane at Device Leads
V_DS=28V, I_DQ=700mA, T_A=25°C unless otherwise noted
Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efficiency, and Output Power Performance
Frequency (MHz)
500
900
1500
2000
Z_S (W)
2.8 + j2.2
1.1 - j0.5
1.1 - j3.6
1.1 - j4.9
Z_L (W)
2.7 + j2.0
1.9 + j0.6
2.0 - j1.2
1.9 - j3.8
P_SAT (W)
100
100
100
89
G_SS (dB)
24.5
21.0
17.0
14.5
Drain Efficiency @ P_SAT (%)
71%
70%
63%
59%
Z_S is the source impedance
presented to the device.
Z_L is the load impedance
presented to the device.
73%
49dBm
Figure 3 - Optimum Impedances for CW
Performance. Z₀ = 5 Ω
68%
49dBm
Figure 4 - Load-Pull Contours, 500MHz,
P_IN = 27dBm, Z_S = 2.8 + j2.2 Ω
Figure 5 - Load-Pull Contours, 900MHz,
P_IN = 32.5dBm, Z_S = 1.1 - j0.5 Ω
NPT1010
Page 3
NDS-023 Rev. 3, April 2013