NPT1010_15 Datasheet, PDF (1/10 Pages) M/A-COM Technology Solutions, Inc. – 100W RF Power Transistor

NPT1010
Gallium Nitride 28V, 100W RF Power Transistor
Built using the SIGANTIC^® NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
• Optimized for broadband operation from
DC – 2000MHz
• 100W P_3dB CW power at 900MHz
• 60-95 W P_SAT CW power from 500-1000MHz in
broadband application design
• High efficiency from 14 - 28V
• 1.4 °C/W R_TH with maximum T_J rating of 200°C
• Robust up to 10:1 VSWR mismatch at all phase
angles with no damage to the device
• Subject to EAR99 export control
DC – 2000 MHz
14 – 28 Volt
GaN HEMT
RF Specifications (CW, 900MHz): V_DS = 28V, I_DQ = 700mA, T_A = 25°C, Measured in Nitronex Test Fixture
Symbol Parameter
Min
Typ
Max
Units
P_3dB
P_1dB
G_SS
h
VSWR
Average Output Power at 3dB Gain Compression
Average Output Power at 1dB Gain Compression
Small Signal Gain
Drain Efficiency at 3dB Gain Compression
10:1 VSWR at all phase angles
49.0
50.0
-
dBm
-
49.0
-
dBm
18.7
19.7
-
dB
57
64
-
%
No damage to the device
Figure 1 - Typical CW Performance in Load-Pull,
V_DS = 28V, I_DQ = 700mA
Figure 2 - Typical CW Performance in Load-Pull,
V_DS = 28V, I_DQ = 700mA
NPT1010
Page 1
NDS-023 Rev. 3, April 2013