MA4SW410_14 Datasheet, PDF (4/6 Pages) M/A-COM Technology Solutions, Inc. – HMIC Silicon SP4T PIN Diode Switch

MA4SW410
HMIC™ Silicon SP4T PIN Diode Switch
Rev. V6
Operation of the MA4SW410 PIN Switch
The simultaneous application of a negative DC current to the low loss port and positive DC current to the isolated
ports as shown below in Fig.1 is required for proper operation of the switch. The backside area of the die is the
RF and DC ground return and the DC return is through the common port J1. A constant current source should be
used to supply the DC control currents. The control voltages at these points will not exceed ±1.5 volts for supply
currents up to ±20 mA. In the low loss state, the series diode must be forward biased and the shunt diode reverse
biased. On all isolated ports, the shunt diode is forward biased and the series diode is reverse biased. A typical
bias network design that will produce >30 dB RF to DC isolation is shown below in Figure 1 .
The optimum insertion loss, P1dB, IP3, and switching speed are attained by using a voltage pull-up resistor in the
DC return path, J1. A minimum value of |-2V| is recommended using a standard, ± 5 V TTL controlled PIN driver
such as MACOM’s MADR-009190-000100.
Typical 2 - 18 GHz Bias Network
J1
39 pF
22 pF
DC Bias (±1.2 V typ.)
100 Ω
22 nH
22 nH
39 pF
J5
MA4SW410
J2
22 pF
Typical Driver Connections
DC Control Current (mA)
J2
J3
J4
-20
+20
+20
+20
-20
+20
+20
+20
-20
+20
+20
+20
J4
J3
Fig. 1
RF Output States
J5
J1-J2
J1-J3
J1-J4
J1-J5
+20
low loss
Isolation
Isolation
Isolation
+20
Isolation
low loss
Isolation
Isolation
+20
Isolation
Isolation
low loss
Isolation
-20
Isolation
Isolation
Isolation
low loss
Compatible MACOM Driver
MADR-009190-000100
4
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