MA4SW410_14 Datasheet, PDF (2/6 Pages) M/A-COM Technology Solutions, Inc. – HMIC Silicon SP4T PIN Diode Switch

MA4SW410
HMIC™ Silicon SP4T PIN Diode Switch
Rev. V6
Electrical Specifications: T_A = 25°C, 20 mA (On-Wafer Measurements)
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Insertion Loss
20 GHz
dB
—
0.9
1.3
Isolation
20 GHz
dB
28
34
—
Input Return Loss
20 GHz
dB
—
15
—
Output Return Loss
20 GHz
dB
—
15
—
Switching Speed¹
10 GHz
ns
—
50
—
1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the
modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an
RC network using the following values: R = 50 - 200 Ω, C = 390 - 1000 pF. Driver spike current, I_C = C dv/dt, ratio of spike current to steady
state current, is typically 10:1.
Absolute Maximum Ratings^2,3,4
Parameter
Absolute Maximum
RF CW Incident Power
+33 dBm
Reverse Voltage
-25 V
Bias Current per Port
±50 mA @ +25°C
Operating Temperature
-65°C to +125°C
Storage Temperature
-65°C to +150°C
2. Exceeding any one or combination of these limits may cause
permanent damage to this device.
3. MACOM does not recommend sustained operation near these
survivability limits.
4. Maximum operating conditions for a combination of RF power,
DC bias and temperature: +33 dBm CW @ 15 mA (per diode)
@ +85°C.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these Class 0
(HBM) and Class C1 (CDM).devices.
2
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