NPT35015_15 Datasheet, PDF (3/10 Pages) M/A-COM Technology Solutions, Inc. – 18W RF Power Transistor

NPT35015
Table 1: Optimum Source and Load Impedances for OFDM Linearity, V_DS = 28V, I_DQ = 200mA
Frequency
(MHz)
3300¹
Z_S (W)
5.4 - j10.3
Z_L (W)
2.9 - j2.5
P_OUT (W)
1.7
Gain (dB)
10.9
3400¹
5.0 - j10.7
2.9 - j2.6
1.8
11.0
3500¹
4.4 - j11.2
2.8 - j2.7
1.7
10.9
3600¹
4.0 - j12.5
2.8 - j3.3
1.7
10.9
3700¹
3.5 - j13.4
3.0 - j3.8
1.8
10.8
3800¹
3.5 - j14.6
3.2 - j4.2
1.8
10.7
Drain Efficiency
(%)
19
22
21
20
20
20
Note 1: Single carrier OFDM waveform 64-QAM 3/4, 8 burst, 20ms frame, 15ms frame data, 3.5 MHz channel bandwidth.
Peak/Avg = 10.3dB @ 0.01% probability on CCDF, 2% EVM.
Z_S is the source impedance
presented to the device.
Z_L is the load impedance
presented to the device.
Figure 1 - Optimal Impedances for OFDM Linearity, V_DS = 28V, I_DQ = 200mA
NPT35015
Page 3
NDS-005 Rev 5, April 2013