NPT35015_15 Datasheet, PDF (1/10 Pages) M/A-COM Technology Solutions, Inc. – 18W RF Power Transistor

NPT35015
Gallium Nitride 28V, 18W RF Power Transistor
Built using the SIGANTIC^® NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
• Optimized for CW, Pulsed, WiMAX, and other ap-
plications from 3300 - 3800 MHz
• 18W P3dB CW Power
• 25W P3dB peak envelope power
• 1.7W linear power @ 2% EVM for single carrier
OFDM, 10.3dB peak/average, 10.3dB @ 0.01%
probability on CCDF, 10.5dB gain, 18%
drain efficiency
• Characterized for operation up to 32V
• 100% RF tested
• Thermally enhanced industry standard package
• High reliability gold metallization process
• Lead-free and RoHS compliant
• Subject to EAR99 export control
3300 – 3800 MHz
18 Watt, 28 Volt
GaN HEMT
Typical 2-Tone Performance: V_DS = 28V, I_DQ = 200mA, Frequency = 3500MHz, Tone spacing = 1MHz, T_C = 25°C.
Measured in Nitronex Test Fixture
Symbol Parameter
Min
Typ
Max
Units
P_3dB,PEP
P_1dB,PEP
G_SS
h
Peak Envelope Power at 3dB Compression
Peak Envelope Power at 1dB Compression
Small Signal Gain
Peak Drain Efficiency at P_OUT = P_3dB
14
18
-
W
-
10
-
W
10
11
-
dB
43
48
-
%
RF Specifications (CW): V_DS = 28V, I_DQ = 200mA, Frequency = 3500MHz, T_C = 25°C, Measured in Load Pull System
Symbol Parameter
Typ
Units
P_3dB
Average Output Power at 3dB Gain Compression
18
W
P_3dB,Pulsed Pulsed Output Power at 3dB Gain Compression
20
W
P_1dB,Pulsed Pulsed Output Power at 1dB Gain Compression
15
W
Typical OFDM Performance: V_DS = 28V, I_DQ = 200mA, P_OUT,AVG = 1.7W, single carrier OFDM waveform 64-QAM
3/4, 8 burst, 20ms frame, 15ms frame data, 3.5MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF.
Frequency = 3300 to 3800MHz. T_C=25°C. Measured in Load Pull System (Refer to Table 1 and Figure 1)
Symbol Parameter
Typ
Units
G_P
h
EVM
IRL
Power Gain
Drain Efficiency
Error Vector Magnitude
Input Return Loss
10.5
dB
18
%
2.0
%
10
dB
NPT35015
Page 1
NDS-005 Rev 5, April 2013