NPT35015_15 Datasheet, PDF (2/10 Pages) M/A-COM Technology Solutions, Inc. – 18W RF Power Transistor

NPT35015
DC Specifications: T_C = 25°C
Symbol Parameter
Off Characteristics
V_BDS
Drain-Source Breakdown Voltage
(V_GS = -8V, I_D = 8mA)
I_DLK
Drain-Source Leakage Current
(V_GS = -8V, V_DS = 60V)
On Characteristics
V_T
V_GSQ
R_ON
I_D
Gate Threshold Voltage
(V_DS = 28V, I_D = 8mA)
Gate Quiescent Voltage
(V_DS = 28V, I_D = 200mA)
On Resistance
(V_GS = 2V, I_D = 60mA)
Drain Current
(V_DS = 7V pulsed, 300ms pulse width,
0.2% duty cycle, V_GS = 2V)
Min
Typ
Max
Units
100
-
-
-
-
V
4
mA
-2.3
-1.8
-1.3
V
-2.0
-1.5
-1.0
V
-
0.45
0.50
W
-
5.0
-
A
Absolute Maximum Ratings: Not simultaneous, T_C = 25°C unless otherwise noted
Symbol Parameter
V_DS
V_GS
P_T
q_JC
T_STG
T_J
HBM
MM
Drain-Source Voltage
Gate-Source Voltage
Total Device Power Dissipation (Derated above 25°C)
Thermal Resistance (Junction-to-Case)
Storage Temperature Range
Operating Junction Temperature
Human Body Model ESD Rating (per JESD22-A114)
Machine Model ESD Rating (per JESD22-A115)
Max
Units
100
V
-10 to 3
V
28
W
6.25
°C/W
-65 to 150
°C
200
°C
1A (>250V)
M1 (>50V)
NPT35015
Page 2
NDS-005 Rev 5, April 2013