NPT1012 Datasheet, PDF (3/8 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 28V, 25W RF Power Transistor

NPT1012
Load-Pull Data, Reference Plane at Device Leads
V_DS=28V, I_DQ=225mA, T_A=25°C unless otherwise noted
Table 1: Optimum Source and Load Impedances¹ for CW Gain, Drain Efficiency, and Output Power Performance
Frequency
(MHz)
500
500
500
900
900
900
1800
2500
2500
2500
3000
3500
V_DS
Z_S
(V)
(W)
Z_L
P_SAT
(W)
(W)
14
7.0 + j8.2 8.6 + j7.4
12
22
7.0 + j8.2 9.7+ j11.3
21
28
7.0 + j8.2 9.7 + j14.1
26
14
5.8 + j3.1 6.8 + j4.7
12
22
5.8 + j3.1 9.6 + j5.3
24
28
5.8 + j3.1 9.8 + j 7.8
26
28
3.5 - j3.6 6.9 + j2.0
26
14
3.9 - j7.5
6.2 - j8.0
13
22
4.8 - j7.0
5.5 - j4.1
19
28
4.8 - j7.0
5.5 - j4.1
26
28
5.3 - j8.8
5.3 - j6.4
26
28
5.0 - j14.5 7.0 - j9.5
26
G_SS
(dB)
27.8
29.2
29.7
22.4
23.3
23.6
18.4
13.7
14.9
15.2
13.2
12.9
Drain Efficiency @ P_SAT
(%)
76
74
68
74
74
67
69
70
69
69
66
63
Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 Ω resistor in the RF path added for stability
Z_S is the source impedance
presented to the device.
ZL is the load impedance
presented to the device.
Figure 3 - Optimum Impedances for CW
Performance, V_DS = 28V
NPT1012
Page 3
NDS-025 Rev. 3, April 2013