NPT1012 Datasheet, PDF (2/8 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 28V, 25W RF Power Transistor

NPT1012
DC Specifications: T_C = 25°C
Symbol Parameter
Off Characteristics
V_BDS
I_DLK
Drain-Source Breakdown Voltage
(V_GS = -8V, I_D = 8mA)
Drain-Source Leakage Current
(V_GS = -8V, V_DS = 60V)
On Characteristics
V_T
V_GSQ
R_ON
I_D,MAX
Gate Threshold Voltage
(V_DS = 28V, I_D = 8mA)
Gate Quiescent Voltage
(V_DS = 28V, I_D = 225mA)
On Resistance
(V_GS = 2V, I_D = 60mA)
Drain Current
(V_DS = 7V pulsed, 300ms pulse width,
0.2% duty cycle, V_GS = 2.0V)
Min
Typ
Max
Units
100
-
-
-
-
V
4
mA
-2.3
-1.8
-1.3
V
-2.0
-1.5
-1.0
V
-
0.44
0.55
W
-
5.4
-
A
Thermal Resistance Specification
Symbol Parameter
q_JC
Thermal Resistance (Junction-to-Case),
T_J = 180 °C
Min
Typ
Max
Units
-
4.0
-
°C/W
Absolute Maximum Ratings: Not simultaneous, T_C = 25°C unless otherwise noted
Symbol Parameter
V_DS
V_GS
I_G
P_T
T_STG
T_J
HBM
MM
CDM
Drain-Source Voltage
Gate-Source Voltage
Gate Current
Total Device Power Dissipation (Derated above 25°C)
Storage Temperature Range
Operating Junction Temperature
Human Body Model ESD Rating (per JESD22-A114)
Machine Model ESD Rating (per JESD22-A115)
Charge Device Model ESD Rating (per JESD22-C101)
Max
Units
100
V
-10 to 3
V
40
mA
44
W
-65 to 150
°C
200
°C
1B (+/-500V)
A (>100V)
IV (>1000V)
NPT1012
Page 2
NDS-025 Rev. 3, April 2013