NPT1012 Datasheet, PDF (1/8 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 28V, 25W RF Power Transistor

NPT1012
Gallium Nitride 28V, 25W RF Power Transistor
Built using the SIGANTIC^® NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
• Optimized for broadband operation from
DC-4000MHz
• 25W P_3dB CW power at 3000MHz
• 16-20W P_3dB CW power from 1000-2500MHz in
application board with >45% drain efficiency
• 10-20W P_3dB CW power from 30-1000MHz in ap-
plication board with >50% drain efficiency
• High efficiency from 14 - 28V
• 4.0 °C/W R_TH with maximum T_J rating of 200 °C
• Robust up to 10:1 VSWR mismatch at all angles
with no device damage at 90 °C flange
• Subject to EAR99 export control
DC – 4000 MHz
25 Watt, 28 Volt
GaN HEMT
RF Specifications (CW, 3000MHz): V_DS = 28V, I_DQ = 225mA, T_C = 25°C, Measured in Nitronex Test Fixture
Symbol
P_3dB
P_1dB
G_SS
h
VSWR
Parameter
Average Output Power at 3dB Gain Compression
Average Output Power at 1dB Gain Compression
Small Signal Gain
Drain Efficiency at 3dB Gain Compression
10:1 VSWR at all phase angles
Min
Typ
Max
Units
43
44
-
dBm
-
43
-
dBm
12
13
-
dB
57
65
-
%
No damage to the device
Figure 1 - Typical CW Performance in
Load-Pull, V_DS = 28V, I_DQ = 225mA
Figure 2 - Typical CW Performance¹ in
Load-Pull, V_DS = 28V, I_DQ = 225mA
Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 Ω resistor in the RF path added for stability
NPT1012
Page 1
NDS-025 Rev. 3, April 2013