MA4SWX10 Datasheet, PDF (3/9 Pages) M/A-COM Technology Solutions, Inc. – Specified from 50 MHz to 20 GHz

MA4SWx10 Series
HMIC™ Silicon PIN Diode Switches
Absolute Maximum Ratings^3,4,5
Parameter
Absolute Maximum
RF CW Incident Power
+33 dBm
Reverse Voltage
-50 V
Bias Current per Port
±50 mA @ +25°C
Operating Temperature
-65°C to +125°C
Storage Temperature
-65°C to +150°C
Junction Temperature
+175°C
3. Exceeding any one or combination of these limits may cause
permanent damage to this device.
4. MACOM does not recommend sustained operation near these
survivability limits.
5. Maximum operating conditions for a combination of RF power,
DC bias and temperature: +33 dBm CW @ 15 mA (per diode)
+85°C.
Rev. V11
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these Class 0
(HBM) and Class C1 (CDM).devices.
Typical Performance Curves @ 10 GHz:
Insertion Loss vs. Bias Current
-0.3
-0.4
-0.5
Isolation vs. Bias Current
-46
-48
-50
MA4SW110
MA4SW210
MA4SW310
-0.6
-0.7
0
10
20
30
Current (mA)
Input Return Loss vs. Bias Current
-15
-20
-25
MA4SW110
MA4SW210
MA4SW310
40
50
MA4SW110
MA4SW210
MA4SW310
-52
-54
0
10
20
30
Current (mA)
Output Return Loss vs. Bias Current
-15
-20
-25
40
50
MA4SW110
MA4SW210
MA4SW310
-30
-30
-35
0
3
10
20
30
40
50
Current (mA)
-35
0
10
20
30
40
50
Current (mA)
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support