MA4E2502 Datasheet, PDF (3/5 Pages) Tyco Electronics – SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes

MA4E2502 Series
SURMOUNT^TM Low, Medium, and High
Barrier Silicon Schottky Diodes
Applications Section
M A4E2502L-1246
Frequency (GHz) vs. Output Voltage (V)
10
1
0.1
M/A-COM Products
Rev. V7
-20 dBm
-10 dBm
0 dBm
+10 dBm
+20 dBm
0.01
8
10
11
14
17
20
23
Frequency (GHz)
M A4E2502L-1246
Input Pow er (dBm ) vs. Output Voltage (V)
1
8 GHz
18 GHz
23 GHz
0.1
0.01
-20
-15
-10
-5
0
Input Pow er (dBm )
5
10
The MA4E2502L-1246 chip was evaluated in a detector circuit in which the Schottky diode terminates a
50 ohm transmission line on a duroid substrate. The chip was attached to the terminal of a 3.5mm
connector and the output voltage was measured through a bias tee on a voltmeter.
Matching was not attempted.
3
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or prototype measurements. Commitment to develop is not guaranteed.
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has under development. Performance is based on engineering tests. Specifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commit-
ment to produce in volume is not guaranteed.
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