MA4E2502 Datasheet, PDF (1/5 Pages) Tyco Electronics – SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes

MA4E2502 Series
SURMOUNT^TM Low, Medium, and High
Barrier Silicon Schottky Diodes
Features
• Extremely Low Parasitic Capitance and Induc-
tance
• Surface Mountable in Microwavable Circuits, No
Wirebonds Required
• Rugged HMIC Construction with Polyimide
Scratch Protection
• Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300°C, 16
hours)
• Lower Susceptibility to ESD Damage
Description and Applications
The MA4E2502 SURMOUNT^TM Series Diodes are
Silicon Low, Medium, and High Barrier Schottky
Devices fabricated with the patented Heterolithic
Microwave Integrated Circuit (HMIC) process.
HMIC circuits consist of Silicon pedestals which
form diodes or via conductors embedded in a glass
dielectric, which acts as the low dispersion, micro-
strip transmission medium. The combination of
silicon and glass allows HMIC devices to have ex-
cellent loss and power dissipation characteristics in
a low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of
a beam lead device coupled with the superior me-
chanical performance of a chip. The Surmount
structure employs very low resistance silicon vias
to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic dis-
charge than conventional beam lead Schottky di-
odes.
The multilayer metallization employed in the fabri-
cation of the Surmount Schottky junctions includes
a platinum diffusion barrier, which permits all de-
vices to be subjected to a 16-hour non-operating
stabilization bake at 300°C.
The “0502” outline allows for Surface Mount place-
ment and multi-functional polarity orientations.
M/A-COM Products
Rev. V7
The MA4E2502 Family of Surmount Schottky di-
odes are recommended for use in microwave cir-
cuits through Ku band frequencies for lower power
applications such as mixers, sub-harmonic mixers,
detectors, and limiters. The HMIC construction
facilitates the direct replacement of more fragile
beam lead diodes with the corresponding Sur-
mount diode, which can be connected to a hard or
soft substrate circuit with solder.
Case Style 1246
DIM
A
B
C
D Sq.
E
INCHES
MIN.
MAX.
0.0445
0.0465
0.0169
0.0189
0.0040
0.0080
0.0128
0.0148
0.0128
0.0148
MILLIMETERS
MIN.
MAX.
1.130
1.180
0.430
0.480
0.102
0.203
0.325
0.375
0.325
0.375
1
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is
considering for development. Performance is based on target specifications, simulated results, and/
or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions
has under development. Performance is based on engineering tests. Specifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commit-
ment to produce in volume is not guaranteed.
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