MA4E1310 Datasheet, PDF (3/5 Pages) M/A-COM Technology Solutions, Inc. – GaAs Flip Chip Schottky Barrier Diode

MA4E1310
GaAs Flip Chip Schottky Barrier Diode
M/A-COM Products
Rev. V3
Forward Current vs Temperature
100.00
10.00
1.00
+125°C
25°C
- 50°C
0.10
0.01
0.00
0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00
Forward Voltage (V)
Absolute Maximum Ratings ¹
Parameter
Operating Temperature
Storage Temperature
Incident LO Power
Incident RF Power
Mounting Temperature
Electrostatic Discharge ( ESD ) Classification ²
Absolute Maximum
-65 °C to +125 °C
-65 °C to +150 °C
+20 dBm
+20 dBm .
+235°C for 10 seconds
Class 0
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Human Body Model
3
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
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