MA4E1310 Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – GaAs Flip Chip Schottky Barrier Diode

MA4E1310
GaAs Flip Chip Schottky Barrier Diode
Features
• Low Series Resistance
• Low Capacitance
• High Cutoff Frequency
• Silicon Nitride Passivation
• Polyimide Scratch Protection
• Designed for Easy Circuit Insertion
Description
M/A-COM's MA4E1310 is a gallium arsenide flip
chip Schottky barrier diode. This diode is fabri-
cated on a OMCVD epitaxial wafer using a proc-
ess designed for high device uniformity and ex-
tremely low parasitics. This device is fully pas-
sivated with silicon nitride and has an additional
layer of polyimide for scratch protection. The
protective coatings prevent damage to the junc-
tion during automated or manual handling. The
flip chip configuration is suitable for pick and
place insertion.
Applications
The high cutoff frequency of this diode allows
use through millimeter wave frequencies. Typi-
cal applications include single and double bal-
anced mixers in PCN transceivers and radios,
police radar detectors, automotive radar detec-
tors, etc. This device can be used through 110
GHz.
.
M/A-COM Products
Rev. V3
Case Style ODS-1278
1
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
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