MA4E1310 Datasheet, PDF (2/5 Pages) M/A-COM Technology Solutions, Inc. – GaAs Flip Chip Schottky Barrier Diode

MA4E1310
GaAs Flip Chip Schottky Barrier Diode
M/A-COM Products
Rev. V3
Electrical Specifications @ + 25 °C
Parameters and Test Conditions
Junction Capacitance at 0V at 1 MHz
Total Capacitance at 0V at 1 MHz¹
Slope Resistance ²
Forward Voltage at 1mA
Reverse Breakdown Voltage at @ 10uA
SSB Noise Figure ( Estimated )
Symbol
Cj
Ct
Rd
Vf1
Vbr
NF
Units
pF
pF
Ohms
Volts
Volts
dB
MA4E1310
Min.
Typ.
Max.
.010
.025
.040
.045
7
9
.60
.70
.80
4.5
7
6.5
Notes:
1. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp.
2. Slope Resistance = ( Vf1 - Vf2) / (10.5mA - 9.5mA)
2
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and/or prototype measurements. Commitment to develop is not guaranteed.
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typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
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