PACKAGEDPINDIODES_15 Datasheet, PDF (2/7 Pages) M/A-COM Technology Solutions, Inc. – Packaged PIN Diodes

Packaged PIN Diodes
V11
100V to 250V Fast Switching PIN Diodes Specifications (T_AMB = +25°C)
Part Number
Minimum
Reverse
Voltage¹
@ I_R <10μA
Volts
( Unless otherwise
specified )
Maximum
Capacitance
( Unless otherwise
specified )
Maximum
Series Res.
Maximum
Thermal
Resistance
C_T @ -10V
f = 1MHz
pF
R_S @ 10mA
f = 500MHz
Ω
°C/W
Nominal Characteristics
Carrier
Lifetime⁴ T_RR5
nS
nS
I-Region
Width
Microns
µM
MA4P202-120
100
0.25
2.50
60
60
5
12
MA4P203-30
100
0.35
1.50
30
100
20
12
MA4P303-32
200
MA4P404-30
250
0.35
0.40²
1.50
0.70³
30
200
60
20
20
1000
100
30
Notes:
1. The minimum specified V_R (Reverse Voltage) is sourced and the resultant reverse leakage current, Ir, is measured to be <10μA
2. At V_R = -50V
3. R_s measured at I_F = +50mA, f = 100MHz.
4. Nominal carrier life time specified with diode biased at I_F = +10mA , I_REV = -6mA
Package Options
Consult the “Package Availability Table” on page 7 for package style choices.
Chip
30 31,32, 94 111 _{120, 255}
186
276
1088
1072 131,132 1056
Package Dimensions can be found on the M/A-COM Technology Solutions website
35V to 500V MELF General Purpose Switching Diodes Specifications (T_AMB = +25°C)
Minimum
(Unless otherwise
specified)
CW Power
Nominal Characteristics
Reverse Maximum Maximum Dissipation
Part Number¹
Voltage² Capacitance Series Res.
I_R <10μA
Volts
C_T @10V
f = 1MHz
pF
R_S @10mA
f = 100MHz
Ω
Rating
Watts
Typical I_F
When
R_S = 75Ω
mA
Carrier
Lifetime³
μS
I-Region
Width
mils
MA4PH235-1072T
35
1.2
0.50
1.0
—
0.3
0.4
MADP-000593-10720T 150
1.5
0.55
10
—
1.0
21
MA4PH236-1072T
600
0.5
3.0
1.0
—
1.5
2.0
MA4PH237-1079T
200
1.5
0.6@50mA
2.0
—
3.0
3.0
MA4PH238-1072T
200
0.5
6.0
1.0
0.30-0.60
2.0
4.0
MA4PH239-1079T
200
0.8
25.0
2.0
1.20-2.40
6.0
14.0
MADP-000234-10720T 500
1.5⁴
0.25@100mA
5.0
—
3.0
2.0
Notes:
1. Only available in case styles indicated.
2. The minimum specified V_R (Reverse Voltage) is sourced and the resultant reverse
leakage current, Ir, is measured to be <10μA.
2 ^{3. Nominal carrier life time specified with diode biased at I}F ^{= +10mA , I}REV ^{= -6mA}
4. Ct tested at 100V
Case Styles 1072, 1079
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: [phone] • Europe Tel: [phone]
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
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• China Tel: [phone]
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.