MA4SW510B-1_16 Datasheet, PDF (2/7 Pages) M/A-COM Technology Solutions, Inc. – Broad Bandwidth Specified up to 18 GHz

MA4SW510B-1
HMIC™ Silicon SP5T PIN Diode Switch
with Integrated Bias Network
Rev. V4
Electrical Specifications: T_A = +25°C, 10 mA (On-Wafer Measurements)
Parameter
Insertion Loss
Isolation
Input Return Loss
Output Return Loss
Switching Speed¹
Test Conditions
2 GHz
6 GHz
12 GHz
18 GHz
2 GHz
6 GHz
12 GHz
18 GHz
6 GHz
12 GHz
18 GHz
2 GHz
6 GHz
12 GHz
18 GHz
10 GHz
Units
Min.
dB
—
45
dB
40
30
25
dB
—
dB
—
ns
—
Typ.
—
0.9
1.2
1.8
50
48
40
35
20
20
17
22
19
19
17
80
Max.
1.5
1.0
1.5
2.1
—
—
—
—
1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the
modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an
RC network using the following values: R = 50 - 200 Ω, C = 390 - 1000 pF. Driver spike current, I_C = C dv/dt, ratio of spike current to steady
state current, is typically 10:1.
Absolute Maximum Ratings^2,3,4
Parameter
RF CW Incident Power
Reverse Voltage
Bias Current per Port
Junction Temperature
Operating Temperature
Storage Temperature
Absolute Maximum
+33 dBm
-50 V
±50 mA @ +25°C
+175°C
-65°C to +125°C
-65°C to +150°C
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these Class 0
(HBM) and Class C1 (CDM).devices.
2. Exceeding any one or combination of these limits may cause
permanent damage to this device.
3. MACOM does not recommend sustained operation near these
survivability limits.
4. Maximum operating conditions for a combination of RF power,
DC bias and temperature: +33 dBm CW @ 15 mA (per diode)
@ +85°C.
2
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