MA4SW410B-1_14 Datasheet, PDF (2/6 Pages) M/A-COM Technology Solutions, Inc. – Broad Bandwidth Specified up to 18 GHz

MA4SW410B-1
HMIC™ Silicon SP4T PIN Diode Switch
with Integrated Bias Network
Rev. V4
Electrical Specifications: T_A = +25°C, 10 mA (On-Wafer Measurements)
Parameter
Insertion Loss
Isolation
Input Return Loss
Switching Speed¹
Test Conditions
6 GHz
12 GHz
18 GHz
6 GHz
12 GHz
18 GHz
6 GHz
12 GHz
18 GHz
10 GHz
Units
dB
dB
dB
ns
Min.
—
40
35
30
—
—
Typ.
0.8
1.0
1.4
50
40
35
10
15
10
80
Max.
1.0
1.2
1.6
—
—
—
1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the
modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an
RC network using the following values: R = 50 - 200 Ω, C = 390 - 1000 pF. Driver spike current, I_C = C dv/dt, ratio of spike current to steady
state current, is typically 10:1.
Absolute Maximum Ratings^2,3,4
Parameter
Absolute Maximum
RF CW Incident Power
+33 dBm
Reverse Voltage
-25 V
Bias Current per Port
±50 mA @ +25°C
Junction Temperature
+175°C
Operating Temperature
-65°C to +125°C
Storage Temperature
-65°C to +150°C
2. Exceeding any one or combination of these limits may cause
permanent damage to this device.
3. MACOM does not recommend sustained operation near these
survivability limits.
4. Maximum operating conditions for a combination of RF power,
DC bias and temperature: +33 dBm CW @ 15 mA (per diode)
@ +85°C.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these Class 0
(HBM) and Class C1 (CDM).devices.
2
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