MA4GP905 Datasheet, PDF (2/3 Pages) M/A-COM Technology Solutions, Inc. – GaAs Beamlead PIN Diode

MA4GP905
GaAs
Beamlead PIN Diode
RoHS Compliant
Rev. V2
Electrical Specifications at T_AMB = 25°C
Test Conditions
Total Capacitance @ 0V/10 GHz ¹
Forward Resistance @ +20mA/10 GHz ²
Forward Voltage at +10mA
Leakage Current at –50 V
Switching Time³
Paramters
Ct
Rs
Vf
Ir
TL
Units
fF
Ohms
Volts
nA
nS
Min Typical Max.
–
25
30
–
3.0
4.9
1.2
1.36
1.5
–
50
300
–
2
10
Notes:
1. Capacitance is determined by measuring the isolation of a single series diode in a 50Ω line at 10GHz.
2. Forward series resistance is determined by measuring the insertion loss of a single series diode in a 50Ω line at
10GHz.
3. Switching speed is measured between 10% and 90% of applied RF in a series mounted switch. Driver delay not
included
mils
MM
DIM
MIN.
MAX.
MIN.
MAX.
A
9.0
1.2
0.229
0.305
B
7.0
10.0
0.178
0.254
C
4.9
5.7
0.125
0.145
D
6.3
7.9
0.160
0.201
E
2.9
3.9
0.077
0.099
F
24.2
25.4
0.615
0.645
2
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typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
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