MA4GP905 Datasheet, PDF (1/3 Pages) M/A-COM Technology Solutions, Inc. – GaAs Beamlead PIN Diode

MA4GP905
GaAs
Beamlead PIN Diode
RoHS Compliant
Rev. V2
Features
♦ Low Series Resistance
♦ Low Capacitance
♦ Millimeter Wave Switching & Cutoff
Frequency
♦ 3 Nanosecond Switching Speed
♦ Can be Driven by a Buffered +5V TTL
♦ Silicon Nitride Passivation
♦ Polyimide Scratch Protection
♦ RoHS Compliant
Description
M/A-COM's MA4GP905 is a Gallium-Arsenide,
beam-lead PIN diode. These devices are
fabricated on a OMCVD epitaxial wafer using a
process designed for high device uniformity and
extremely low parasitics. The diode exhibits low
series resistance, 3Ω, low capacitance, 25fF,and
an extremely fast switching speed of 3nS. They
are fully passivated with silicon nitride and have
an additional layer of a polymer for scratch
protection. The protective coating prevents
damage to the junction and the anode air bridges
during handling and assembly.
Applications
The ultra low capacitance of the MA4GP905
device makes it ideally suited for use through
W-band. The low RC product and low profile of
the beamlead PIN diode allows for use in
microwave and millimeter wave switch designs,
where low insertion loss and high isolation are
required. The operating bias conditions of +20mA
for the low loss state, and 0v, for the isolation
state permits the use of a simple +5V TTL gate
driver. These GaAs, beamlead diodes, can be
used in switching arrays on radar systems, high
speed ECM circuits, optical switching networks,
instrumentation, and other wideband multi-throw
switch assemblies.
MA4GP905
Absolute Maximum Ratings @ T_AMB = 25°C
(unless otherwise specified)
Parameter
Reverse Voltage
Operating Temperature
Absolute Maximum
-50V
-65°C to +125°C
Storage Temperature
-65°C to +150°C
Junction Temperature
+175°C
Forward DC Current
40 mA
C.W. Incident Power
+20 dBm
Mounting Temperature +235°C for 10 seconds
1
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