MA4E2037_V3 Datasheet, PDF (2/4 Pages) M/A-COM Technology Solutions, Inc. – GaAs Beam Lead Schottky Diodes

MA4E2037, MA4E2038, MA4E2039, MA4E2040
GaAs Beam Lead Schottky Diodes
Rev. V3
Electrical Specifications @ + 25 °C (Measured as Single Diodes)
Parameters and Test Conditions
Junction Capacitance at 0V at 1 MHz
Total Capacitance at 0V at 1 MHz¹
Junction Capacitance Difference
Series Resistance at +10mA²
Forward Voltage at +1mA
Forward Voltage Difference at 1mA
Reverse Breakdown Voltage at -10uA
Symbol
Cj
Ct
DCj
Rs
Vf1
DVf
Vbr
Units
pF
pF
pF
Ohms
Volts
Volts
Volts
MA4E2037
Min.
Typ.
Max.
.020
.030
.045
.060
MA4E2038
Min.
Typ.
Max.
.015
-
.035
.045
4
7
6.5
10
.60
.70
.80
.60
.70
.80
4.5
7
4.5
7
Parameters and Test Conditions
Junction Capacitance at 0V at 1 MHz
Total Capacitance at 0V at 1 MHz¹
Junction Capacitance Difference
Series Resistance at +10mA²
Forward Voltage at +1mA
Forward Voltage Difference at 1mA
Reverse Breakdown Voltage at -10uA
Symbol
Cj
Ct
DCj
Rs
Vf1
DVf
Vbr
Units
pF
pF
pF
Ohms
Volts
Volts
Volts
MA4E2039
Min.
Typ.
Max.
.020³
.030³
.045³
.060³
.005
.010
4
7
.60
.70
.80
.005
.010
MA4E2040
Min.
Typ.
.020³
Max.
.030³
.045³
.060³
.005
.010
4
7
.60
.70
.80
.005
.010
Notes:
1. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp.
2. Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 ohms.
3. Capacitance for the MA4E2039 and MA4E2040 is per Schottky diode.
2
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is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
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Solutions has under development. Performance is based on engineering tests. Specifications are
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changes to the product(s) or information contained herein without notice.