MA4E2037_V3 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – GaAs Beam Lead Schottky Diodes

MA4E2037, MA4E2038, MA4E2039, MA4E2040
GaAs Beam Lead Schottky Diodes
Features
• Low Series Resistance
• Low Capacitance
• High Cut-Off Frequency
• Silicon Nitride Passivation
• Multiple Configurations
Description and Applications
M/A-Com’s MA4E2037 and MA4E2038 single diodes,
MA4E2039 anti-parallel pair and MA4E2040 series tee
are gallium arsenide beam lead Schottky barrier diodes.
These devices are fabricated on OMCVD epitaxial wa-
fers using a process designed for high device uniformity
and extremely low parasitics. The high carrier mobility of
gallium arsenide results in lower series resistance than a
silicon Schottky with equivalent capacitance, resulting in
lower noise figure and conversion loss. The diodes are
fully passivated with silicon nitride and have an addi-
tional layer of a polymer for scratch protection. The pro-
tective coatings prevent damage to the junction and the
anode air bridge during handling.
Applications
The high cut-off frequency of these diodes allows use
through millimeter wave frequencies. Typical applica-
tions include single and double balanced mixers in PCN
transceivers and radios, automotive radar systems and
police radar detectors.
The MA4E2039 anti-parallel pair is designed for use in
sub harmonically pumped mixers. Close matching of the
diode characteristics in high LO suppression at the RF
input.
MA4E2037, MA4E2038
Rev. V3
MA4E2039
MA4E2040
Notes : ( Unless otherwise specified )
1. Dimensions are in mm (inches).
2. Views are with junction side up.
1
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and/or prototype measurements. Commitment to develop is not guaranteed.
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changes to the product(s) or information contained herein without notice.