MA4AGSW8-1_15 Datasheet, PDF (2/7 Pages) M/A-COM Technology Solutions, Inc. – SP8T AlGaAs PIN Diode Switch RoHS Compliant

MA4AGSW8-1
SP8T AlGaAs PIN Diode Switch
RoHS Compliant
Rev. V2
Electrical Specifications @ T_A = 25°C, +/-15mA bias current and 0V
(On-wafer measurements)
PARAMETER
INSERTION LOSS
ISOLATION ¹
RF SPECIFICATIONS
FREQUENCY
BAND
MIN
TYP
0.05 - 18 GHz
-
1.5
18 - 26 GHz
-
1.8
26 - 40 GHz
-
2.0
0.05 - 18 GHz
30
32
18 - 26 GHz
30
32
26 - 40 GHz
30
32
MAX
2.0
2.1
2.3
-
-
-
UNITS
dB
dB
dB
dB
dB
dB
INPUT/OUTPUT RETURN LOSS 0.05 - 18 GHz
10
15
-
dB
18 - 26 GHz
13
15
-
dB
26 - 40 GHz
10
20
-
dB
*Note: Isolation is measured through (3) diodes from common port ( input ) to selected output port with (1) opposite series
junction diode in low loss. Isolation for (2) diodes from common port ( Input ) to selected output with the same series junction
diode port in low loss = 22 dB Typical.
Parameter
Switching Speed*
( 10-90 % RF Voltage )
F ( GHz )
10.0
Test Conditions
+/- 5V TTL Compatible PIN Diode Driver
Typical
Value
20
Units
nS
*Note: Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a +/- 5V TTL compatible
driver. Driver output parallel RC network uses a capacitor between 390 pF-560 pF and a resistor between 150-220 Ω ohms to
achieve 15 ns rise and fall times.
2
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