MA4AGSW8-1_15 Datasheet, PDF (1/7 Pages) M/A-COM Technology Solutions, Inc. – SP8T AlGaAs PIN Diode Switch RoHS Compliant

MA4AGSW8-1
SP8T AlGaAs PIN Diode Switch
RoHS Compliant
FEATURES
 Ultra Broad Bandwidth: 50 MHz to 40 GHz
 Functional Bandwidth : 50 MHz to 50 GHz
 Low Current consumption.
 -10mA for low loss state
+10mA for Isolation state
 M/A-COM’s unique AlGaAs hetero-junction
anode technology.
 Silicon Nitride Passivation
 Polymer Scratch protection
Rev. V2
Yellow areas indicate bond pads
DESCRIPTION
M/A-COM’s MA4AGSW8-1 is an Aluminum-Gallium-
Arsenide, single pole, eight throw (SP8T), PIN diode
switch. The switch features enhanced AlGaAs anodes
which are formed using M/A-COM’s patented hetero-
junction technology. AlGaAs technology produces a
switch with less loss than a device fabricated using
conventional GaAs processes. As much as a 0.3 dB
reduction in insertion loss can be realized at 50 GHz.
This device is fabricated on an OMCVD epitaxial wafer
using a process designed for high device uniformity
and extremely low parasitics. The diodes within the
chip exhibit low series resistance, low capacitance,
and fast switching speed. They are fully passivated
with silicon nitride and have an additional polymer
layer for scratch protection. The protective coating
prevents damage during handling and assembly to the
diode junction and the chip anode air-bridges. Off chip
bias circuitry is required.
APPLICATIONS
The high electron mobility of AlGaAs and the low
capacitance of the PIN diodes used makes this switch
ideal for fast response, high frequency, multi-throw
switch designs. AlGaAs PIN diode switches are an
ideal choice for switching arrays in radar systems,
radiometers, test equipment and other multi-assembly
components.
Absolute Maximum Ratings @ T_AMB = +25°C
Parameter
Operating Temperature
Storage Temperature
Incident C.W. RF Power
Breakdown Voltage
Bias Current
Assembly Temperature
Junction Temperature
Maximum Rating
-55°C to +125°C
-55°C to +150°C
+23dBm C.W.
25V
± 25mA
+300°C < 10 sec
+175°C
Maximum combined operating conditions for RF Power, D.C.
bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @
+85°C.
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