MA4SW410 Datasheet, PDF (1/7 Pages) Tyco Electronics – SP4T Monolithic PIN Diode Switch

MA4SW410
HMIC™ Silicon SP4T PIN Diode Switch
RoHS Compliant
V6
Features
♦ Broad Bandwidth
♦ Specified from 50 MHz to 20 GHz
♦ Usable from 50 MHz to 26.5 GHz
♦ Lower Insertion Loss and Higher Isolation than
Comparable pHEMT or Discrete Component Designs
♦ Rugged Fully Monolithic
♦ Glass Encapsulated Chip with Polymer Protective
Coating
♦ Up to +30dBm C.W. Power Handling @ +25°C
♦ 50 nS Switching Speed
Description
The MA4SW410 is a SP4T, series-shunt, broadband,
PIN diode switch made with M/A-COM’s Tech’s patented
HMIC^TM (Heterolithic Microwave Integrated Circuit)
process. This process allows the silicon pedestals which
form the series - shunt diodes and vias to be embedded
into low loss, low dispersion glass. By also incorporating
small spacing between circuit elements, the result` is an
HMIC chip with low insertion loss and high isolation at
frequencies up to 26.5GHz. It is designed to be used as
a moderate power, high performance switch and provide
superior performance when compared to similar designs
that use discrete components.
The top side of the chip is protected by a polymer
coating for manual or automatic handling and large gold
bond pads help facilitate connection of low inductance
ribbons. The gold metallization on the backside of the
chip allows for attachment via 80/20, gold/tin solder or
conductive silver epoxy.
Applications
The MA4SW410 is a high performance switch suitable
for use in multi-band ECM, radar, and instrumentation
control circuits where high isolation to insertion loss
ratios are required. With a standard ±5V, TTL controlled,
PIN diode driver, 50nS switching speeds are achievable.
Absolute Maximum Ratings
T_AMB = +25°C ( Unless Otherwise Specified )
Parameter
Value
Operating Temperature
-65°C to +125°C
Storage Temperature
-65°C to +150°C
RF C.W. Incident Power
+30dBm
Forward Bias Current per Port ± 50mA
Reverse Applied Voltage
-25 Volts
Max. operating conditions for a combination of
RF power, D.C. bias and temperature:
+30dBm CW @ 15mA (per diode) @+85°C
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
• North America Tel: [phone] / Fax: [phone]
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
• Europe Tel: [phone] / Fax: [phone]
• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macom.com for additional data sheets and product information.
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.