LNTA4001NT1G Datasheet, PDF (4/5 Pages) Leshan Radio Company – Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection

LESHAN RADIO COMPANY, LTD.
TYPICAL PERFORMANCE CURVES
LNTA4001NT1G
25
Ciss
20
Crss
15
T_J = 25°C
Ciss
10
Coss
5
VDS = 0 V ^VGS ^{= 0 V}
0
10
5
0
5
10
Crss
15
20
V_GS VDS
GATE-TO-SOURCE OR DRAIN-TO-SOURCE
VOLTAGE (V)
Figure 7. Capacitance Variation
1000
100
V_DD = 5 V
I_D = 10 mA
V_GS = 4.5 V
t_d(off)
t_f
t_r
10
t_d(on)
1
1
10
100
R_G, GATE RESISTANCE (W)
Figure 8. Resistive Switching Time Variation
versus Gate Resistance
0.1
0.08
V_GS = 0 V
T_J = 25°C
0.06
0.04
0.02
0
0.5
0.55 0.6
0.65 0.7
0.75 0.8
V_SD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage
versus Current
Rev .O 4/5