LNTA4001NT1G Datasheet, PDF (1/5 Pages) Leshan Radio Company – Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection

LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
20 V, 238 mA, Single, N-Channel, Gate
ESD Protection
Features
•ăLow Gate Charge for Fast Switching
•ăSmall 1.6 x 1.6 mm Footprint
•ăESD Protected Gate
•ăPb-Free Package is Available
• ESDD PPrrootteecctteedd:2:105000VV
Applications
•ăPower Management Load Switch
•ăLevel Shift
•ăPortable Applications such as Cell Phones, Media Players,
Digital Cameras, PDA's, Video Games, Hand Held Computers, etc.
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Steady State = 25°C
V_DSS
V_GS
I_D
20
V
±10
V
238 mA
Power Dissipation
(Note 1)
Steady State = 25°C P_D
300 mW
Pulsed Drain Current
t_P v 10 ms
Operating Junction and Storage Temperature
I_DM
T_J,
T_STG
714 mA
-55 to °C
150
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I_SD
238 mA
T_L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction-to-Ambient – Steady State (Note 1)
R_qJA
416 °C/W
1. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq.
[1 oz] including traces).
LNTA4001NT1G
SC-89
V_(BR)DSS
20 V
R_DS(on)
Typ @ V_GS
1.5 W @ 4.5 V
2.2 W @ 2.5 V
I_D MAX
(Note 1)
238 mA
PIN CONNECTIONS
SC-89 (3-Leads)
Gate 1
3 Drain
Source 2
(Top View)
MARKING DIAGRAM
3
TF
1
2
TF = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
Package
LNTA4001NT1G SC-89
Shipping
3000 Tape & Reel
LNTA4001NT3G SC-89
10000 Tape & Reel
Rev .O 1/5