LNTA4001NT1G Datasheet, PDF (2/5 Pages) Leshan Radio Company – Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection

LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
ON CHARACTERISTICS (Note 2)
V_(BR)DSS
I_DSS
I_GSS
V_GS = 0 V, I_D = 100 mA
V_GS = 0 V, V_DS = 20 V
V_DS = 0 V, V_GS = ±10 V
Gate Threshold Voltage
Drain-to-Source On Resistance
Forward Transconductance
CAPACITANCES
V_GS(TH)
R_DS(on)
g_FS
V_DS = 3 V, I_D = 100 mA
V_GS = 4.5 V, I_D = 10 mA
V_GS = 2.5 V, I_D = 10 mA
V_DS = 3 V, I_D = 10 mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 3)
C_ISS
C_OSS
C_RSS
V_DS = 5 V, f = 1 MHz,
V_GS = 0 V
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
DRAIN-SOURCE DIODE CHARACTERISTICS
t_d(ON)
t_r
t_d(OFF)
t_f
V_GS = 4.5 V, V_DS = 5 V,
I_D = 10 mA, R_G = 10 W
Forward Diode Voltage
V_SD
V_GS = 0 V, I_S = 10 mA
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
LNTA4001NT1G
Min Typ Max Unit
20
V
1.0 mA
±100 mA
0.5
1.0
1.5 V
1.5
3.0
W
2.2
3.5
50
mS
11.5 20
10
15 pF
3.5
6.0
13
ns
15
98
ns
60
0.66 0.8 V
Rev .O 2/5